Transferring thin film GaN LED Epi-structure to the Cu substrate by chemical lift-off technology

Ray-Hua Horng*, Chun Ting Pan, Tsung Yen Tsai, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this paper, a patterned sacrificial layer structure comprised of 3 m-wide SiO 2 narrow strips and 3 m spacing between strips fabricated on sapphire substrate was proposed. The structure was used not only to improve GaN epilayer quality, but also as a sacrificial layer structure. The GaN light emitting diodes (LEDs) covered by the Cu substrate was fabricated after the GaN epitaxy layer was grown on the sapphire by lateral epitaxial overgrowth. Chemical etching using hydrofluoric acid was conducted to remove the aforementioned SiO 2 strips, and hence transform them into narrow tunnels. The GaN LEDs with the Cu substrate detached from the sapphire substrate after interface strain was increased, which demonstrates that n-side-up vertical GaN LEDs could be more easily obtained using chemical lift-off technology without laser damage compared with the laser lift-off technique.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number7
DOIs
StatePublished - 29 Jun 2011

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