Transconductance distribution in program/erase cycling of NAND flash memory devices: A statistical investigation

Yung Yueh Chiu; I. Chun Lin; Kai Chieh Chang; Bo Jun Yang; Toshiaki Takeshita; Masaru Yano; Riichiro Shirota

doi:10.1109/TED.2019.2892794

Transconductance distribution in program/erase cycling of NAND flash memory devices: A statistical investigation

Yung Yueh Chiu^*, I. Chun Lin, Kai Chieh Chang, Bo Jun Yang, Toshiaki Takeshita, Masaru Yano, Riichiro Shirota

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new method for characterizing the evolution of oxide charge (Q _T ) generation during program/erase (P/E) cycles is developed. The concentration of Q _T can be separated from the floating gate charge (O _FG ) by statistically analyzing the distribution of transconductance reduction (ΔG _m,max ) after P/E cycles. The effect of the number and position of discrete Q _T the distribution of ΔG _m,max is studied. The cycling dependence of the Qj generation is given by a fractional equation that includes a power of the number of P/E cycles in the denominator. For fewer than 30k cycles, the equation can be simplified as a power-law equation in the number of cycles with a power factor of 0.58. For more than 30k cycles, the Q _T generation gradually goes to a plateau value Q ₀ = 1.5 × 10 ²⁰ cm ^-3 . It is indicated that the Q _T -generation is limited by the concentration of inherent weak bonding points inside SiO ₂ or the Si/SiO ₂ interface. The temperature dependence of the Q _T generation is also provided. The activation energy (E _A ) of the Q _T generation is approximately 0.1 eV, which is compatible with the E _A value of electron traps creation in SiO ₂ .

Original language	English
Article number	8631191
Pages (from-to)	1255-1261
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	3
DOIs	https://doi.org/10.1109/TED.2019.2892794
State	Published - 1 Mar 2019

Keywords

Endurance
NAND flash memory
Oxide charge
Reliability

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title = "Transconductance distribution in program/erase cycling of NAND flash memory devices: A statistical investigation",

abstract = " A new method for characterizing the evolution of oxide charge (Q T ) generation during program/erase (P/E) cycles is developed. The concentration of Q T can be separated from the floating gate charge (O FG ) by statistically analyzing the distribution of transconductance reduction (ΔG m,max ) after P/E cycles. The effect of the number and position of discrete Q T the distribution of ΔG m,max is studied. The cycling dependence of the Qj generation is given by a fractional equation that includes a power of the number of P/E cycles in the denominator. For fewer than 30k cycles, the equation can be simplified as a power-law equation in the number of cycles with a power factor of 0.58. For more than 30k cycles, the Q T generation gradually goes to a plateau value Q 0 = 1.5 × 10 20 cm -3 . It is indicated that the Q T -generation is limited by the concentration of inherent weak bonding points inside SiO 2 or the Si/SiO 2 interface. The temperature dependence of the Q T generation is also provided. The activation energy (E A ) of the Q T generation is approximately 0.1 eV, which is compatible with the E A value of electron traps creation in SiO 2 . ",

keywords = "Endurance, NAND flash memory, Oxide charge, Reliability",

author = "Chiu, {Yung Yueh} and Lin, {I. Chun} and Chang, {Kai Chieh} and Yang, {Bo Jun} and Toshiaki Takeshita and Masaru Yano and Riichiro Shirota",

year = "2019",

month = mar,

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doi = "10.1109/TED.2019.2892794",

language = "English",

volume = "66",

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Transconductance distribution in program/erase cycling of NAND flash memory devices : A statistical investigation. / Chiu, Yung Yueh; Lin, I. Chun; Chang, Kai Chieh; Yang, Bo Jun; Takeshita, Toshiaki; Yano, Masaru; Shirota, Riichiro.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 3, 8631191, 01.03.2019, p. 1255-1261.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Transconductance distribution in program/erase cycling of NAND flash memory devices

T2 - A statistical investigation

AU - Chiu, Yung Yueh

AU - Lin, I. Chun

AU - Chang, Kai Chieh

AU - Yang, Bo Jun

AU - Takeshita, Toshiaki

AU - Yano, Masaru

AU - Shirota, Riichiro

PY - 2019/3/1

Y1 - 2019/3/1

N2 - A new method for characterizing the evolution of oxide charge (Q T ) generation during program/erase (P/E) cycles is developed. The concentration of Q T can be separated from the floating gate charge (O FG ) by statistically analyzing the distribution of transconductance reduction (ΔG m,max ) after P/E cycles. The effect of the number and position of discrete Q T the distribution of ΔG m,max is studied. The cycling dependence of the Qj generation is given by a fractional equation that includes a power of the number of P/E cycles in the denominator. For fewer than 30k cycles, the equation can be simplified as a power-law equation in the number of cycles with a power factor of 0.58. For more than 30k cycles, the Q T generation gradually goes to a plateau value Q 0 = 1.5 × 10 20 cm -3 . It is indicated that the Q T -generation is limited by the concentration of inherent weak bonding points inside SiO 2 or the Si/SiO 2 interface. The temperature dependence of the Q T generation is also provided. The activation energy (E A ) of the Q T generation is approximately 0.1 eV, which is compatible with the E A value of electron traps creation in SiO 2 .

AB - A new method for characterizing the evolution of oxide charge (Q T ) generation during program/erase (P/E) cycles is developed. The concentration of Q T can be separated from the floating gate charge (O FG ) by statistically analyzing the distribution of transconductance reduction (ΔG m,max ) after P/E cycles. The effect of the number and position of discrete Q T the distribution of ΔG m,max is studied. The cycling dependence of the Qj generation is given by a fractional equation that includes a power of the number of P/E cycles in the denominator. For fewer than 30k cycles, the equation can be simplified as a power-law equation in the number of cycles with a power factor of 0.58. For more than 30k cycles, the Q T generation gradually goes to a plateau value Q 0 = 1.5 × 10 20 cm -3 . It is indicated that the Q T -generation is limited by the concentration of inherent weak bonding points inside SiO 2 or the Si/SiO 2 interface. The temperature dependence of the Q T generation is also provided. The activation energy (E A ) of the Q T generation is approximately 0.1 eV, which is compatible with the E A value of electron traps creation in SiO 2 .

KW - Endurance

KW - NAND flash memory

KW - Oxide charge

KW - Reliability

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ER -

Transconductance distribution in program/erase cycling of NAND flash memory devices: A statistical investigation

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Keywords

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