TY - JOUR
T1 - Total-Dose Effect of X-ray Irradiation on Lowerature Polycrystalline Silicon Thin-Film Transistors
AU - Tai, Ya Hsiang
AU - Yeh, Shan
AU - Huang, Shih Hsuan
AU - Chang, Ting Chang
PY - 2020/6/1
Y1 - 2020/6/1
N2 - In this paper, the total-dose effect of X-ray irradiation on lowerature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, short shot with different frequencies and high/low intensity for short/long time were performed and analyzed. With an increase of the irradiation dose, the threshold voltage ( Vth ) shifts negatively, the subthreshold swing ( S.S.) degrades and the field effect mobility decreases owing to positive trapped charges and interface traps. All magnitude of negative shifts of ( Vth ), ( S.S. ) and field effect mobility for LTPS TFTs are well correlated to the total accumulated dose. The results are consistent with ( Vth} ) shift due to trapped holes and the interface traps for mobility.
AB - In this paper, the total-dose effect of X-ray irradiation on lowerature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, short shot with different frequencies and high/low intensity for short/long time were performed and analyzed. With an increase of the irradiation dose, the threshold voltage ( Vth ) shifts negatively, the subthreshold swing ( S.S.) degrades and the field effect mobility decreases owing to positive trapped charges and interface traps. All magnitude of negative shifts of ( Vth ), ( S.S. ) and field effect mobility for LTPS TFTs are well correlated to the total accumulated dose. The results are consistent with ( Vth} ) shift due to trapped holes and the interface traps for mobility.
KW - Lowerature polycrystalline silicon (LTPS)
KW - thin-film transistor (TFT)
KW - X-ray irradiation dose
UR - http://www.scopus.com/inward/record.url?scp=85085557401&partnerID=8YFLogxK
U2 - 10.1109/LED.2020.2988879
DO - 10.1109/LED.2020.2988879
M3 - Article
AN - SCOPUS:85085557401
VL - 41
SP - 864
EP - 867
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 6
M1 - 9072453
ER -