Total-Dose Effect of X-ray Irradiation on Lowerature Polycrystalline Silicon Thin-Film Transistors

Ya Hsiang Tai; Shan Yeh; Shih Hsuan Huang; Ting Chang Chang

doi:10.1109/LED.2020.2988879

Total-Dose Effect of X-ray Irradiation on Lowerature Polycrystalline Silicon Thin-Film Transistors

Ya Hsiang Tai, Shan Yeh^*, Shih Hsuan Huang, Ting Chang Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article

Abstract

In this paper, the total-dose effect of X-ray irradiation on lowerature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, short shot with different frequencies and high/low intensity for short/long time were performed and analyzed. With an increase of the irradiation dose, the threshold voltage ( V^th ) shifts negatively, the subthreshold swing ( S.S.) degrades and the field effect mobility decreases owing to positive trapped charges and interface traps. All magnitude of negative shifts of ( V^th ), ( S.S. ) and field effect mobility for LTPS TFTs are well correlated to the total accumulated dose. The results are consistent with ( V^th} ) shift due to trapped holes and the interface traps for mobility.

Original language	English
Article number	9072453
Pages (from-to)	864-867
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/LED.2020.2988879
State	Published - 1 Jun 2020

Keywords

Lowerature polycrystalline silicon (LTPS)
thin-film transistor (TFT)
X-ray irradiation dose

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10.1109/LED.2020.2988879

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Tai, Y. H., Yeh, S., Huang, S. H., & Chang, T. C. (2020). Total-Dose Effect of X-ray Irradiation on Lowerature Polycrystalline Silicon Thin-Film Transistors. IEEE Electron Device Letters, 41(6), 864-867. [9072453]. https://doi.org/10.1109/LED.2020.2988879

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abstract = "In this paper, the total-dose effect of X-ray irradiation on lowerature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, short shot with different frequencies and high/low intensity for short/long time were performed and analyzed. With an increase of the irradiation dose, the threshold voltage ( Vth ) shifts negatively, the subthreshold swing ( S.S.) degrades and the field effect mobility decreases owing to positive trapped charges and interface traps. All magnitude of negative shifts of ( Vth ), ( S.S. ) and field effect mobility for LTPS TFTs are well correlated to the total accumulated dose. The results are consistent with ( Vth} ) shift due to trapped holes and the interface traps for mobility.",

keywords = "Lowerature polycrystalline silicon (LTPS), thin-film transistor (TFT), X-ray irradiation dose",

author = "Tai, {Ya Hsiang} and Shan Yeh and Huang, {Shih Hsuan} and Chang, {Ting Chang}",

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