Topological Transition in a 3 nm Thick Al Film Grown by Molecular Beam Epitaxy

Ankit Kumar, Guan Ming Su, Chau Shing Chang, Ching Chen Yeh, Bi Yi Wu, Dinesh K. Patel, Yen Ting Fan, Sheng Di Lin*, Lee Chow, Chi Te Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We have performed detailed transport measurements on a 3 nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (2.4 K) compared to that of bulk Al (1.2 K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology.

Original languageEnglish
Article number6376529
Number of pages6
JournalJournal of Nanomaterials
StatePublished - 27 Dec 2019

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