Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration

S. E. Babcock*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

An investigation of the thermal stability and Schottky behavior of Ti-W thin film contacts to n-Si in the presence of an Al overlayer is reported. Rutherford backscattering spectroscopy, glancing-incidence x-ray diffraction, and current-voltage measurements were used to characterize the multilayer contact structures. The low Schottky barrier height, 0.51 eV, of the Al/Ti 80W20/n-Si structure was repeatedly measured after 30-min anneals up to 500°C. This stability was improved to 600°C when a diffusion barrier layer of Ti30W 70 alloy was included. The detection and significance of Al penetration in low Schottky barrier height contacts to Si have been discussed.

Original languageEnglish
Pages (from-to)1599-1605
Number of pages7
JournalJournal of Applied Physics
Volume59
Issue number5
DOIs
StatePublished - 1 Dec 1986

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