TiN capping effect on high temperature annealed RE-oxide MOS capacitors for scaled EOT

D. Kitayama*, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The effect of TiN capping on high temperature annealed W gated La 2O3 dielectrics capacitors has been characterized. The increase in EOT has been well suppressed with TiN capping and a 0.55 nm EOT has been achieved even after an 900°C annealing. The electrical characterization has revealed a significant reduction in the capacitance-voltage (C-V) hysteresis and leakage current density when the annealing temperature is 900°C or higher.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages527-535
Number of pages9
Edition3
DOIs
StatePublished - 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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