Time resolved X-ray diffraction study of the transformation kinetics of TiSi2-C49 in amorphous Si/Ti multilayers

J. Sariel*, H. D. Chen, J. F. Jongste, S. Radelaar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Amorphous Si/Ti multilayers transform at high temperatures (above 700 °C) to TiSi2-C54. This phase is important for microelectronics applications because of its low resistivity, stability up to 900 °C, and compatibility with silicon processing. However, an unfavorable metastable TiSi2-C49 phase is usually formed at lower temperatures. Thus, an understanding of the C49 phase formation kinetics is useful to the device processing strategy. The kinetics of the transformation of TiSi2-C49 phase can be characterized as a process of nucleation and growth, using the well known Johnson Mehl Avrami (JMA) equation. In the present work the formation kinetics of the C49 phase has been studied by an in situ x-ray diffraction technique. Isothermal annealing in vacuum was done at four temperatures, in the range of 275 °C to 310 °C. A position sensitive detector (PSD) was used to simultaneously collect the diffracted beams of (131) and (150) peaks of the C49 phase. From the data, the Avrami exponent, n, was determined to be 2.0±0.1. The reaction rate constant k follows a familiar Arrhenius-type equation with a measured activation energy of 2.5 eV. Comparison of our x-ray results with kinetic data obtained by other means will be discussed.

Original languageEnglish
Title of host publicationThermodynamics and Kinetics
PublisherPubl by Materials Research Society
Pages269-274
Number of pages6
ISBN (Print)1558992073
DOIs
StatePublished - 1 Jan 1993
EventProceedings of the Symposium on Phase Transformations in Thin Films - San Francisco, CA, USA
Duration: 13 Apr 199315 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume311
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Symposium on Phase Transformations in Thin Films
CitySan Francisco, CA, USA
Period13/04/9315/04/93

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