Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer

Yu An Liao*, Wei Ting Hsu, Ming Chih Lee, Pei Chin Chiu, Jen Inn Chyi, Wen-Hao Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Scopus citations

Abstract

We investigate carrier lifetimes of InAs/GaAs quantum dots (QDs) covered by a thin GaAs1-xSbxlayer by time-resolved photoluminescence (PL). Both the power dependent PL peak shift and the longer decay time confirm the type-II band alignments. Different recombination paths have been identified by temperature dependent measurements. At low temperatures, the long-range recombination with holes trapped in the GaAsSb layer is significant, resulting in non-single-exponential decays. The short-range recombination with holes confined in the band-bending region surrounding the InAs QDs is important at higher temperatures. The variation in decay time across the ground-state and the temporal PL peak redshift further confirm the localization of holes in the GaAsSb layer.

Original languageEnglish
Pages (from-to)1449-1452
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume6
Issue number6
DOIs
StatePublished - 30 Sep 2009
Event35th International Symposium on Compound Semiconductors, ISCS 2008 - Rust, Germany
Duration: 21 Sep 200824 Sep 2008

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