Time-resolved photoluminescence of isoelectronic traps in ZnSe 1-x Tex semiconductor alloys

Y. C. Lin, Wu-Ching Chou, W. C. Fan, J. T. Ku, F. K. Ke, W. J. Wang, S. L. Yang, Wei-Kuo Chen, Wen-Hao Chang, C. H. Chia

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Abstract

Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-x Tex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.

Original languageEnglish
Article number241909
JournalApplied Physics Letters
Volume93
Issue number24
DOIs
StatePublished - 29 Dec 2008

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