Time-dependent ensemble Monte Carlo simulation for planar-doped GaAs structures

Ta-Hui Wang*, K. Hess, G. J. Iafrate

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A time-dependent ensemble Monte Carlo simulation has been developed which includes the computation of the self-consistent electric field and electron concentration. The Monte Carlo code is used to study transient and steady-state transport in planar-doped-barrier (PDB) GaAs diodes and transistors. Results are presented for the temporal and spatial evolution of electronic transport through the PDB. We show that (i) average velocities achievable with a PDB are significantly above the steady-state velocities by about a factor of 3, (ii) the rise time of the electric current in the PDB is in the subpicosecond range for diode length below 2000 Å, (iii) a pronounced displacement current dominates the transient electronics at onset of injection, and (iv) polar optical phonon absorption contributes significantly to the thermionic-emission current over the barriers.

Original languageEnglish
Pages (from-to)857-861
Number of pages5
JournalJournal of Applied Physics
Volume58
Issue number2
DOIs
StatePublished - 1 Dec 1985

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