Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes

Yun Ju Wang, Yi Ting Huang, Bing Yue Tsui*, Chao Hsin Chien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Effects of NO annealing and isolation structure on the time-dependent dielectric breakdown of gate oxide is studied. NO annealing can reduce the interface state density effectively but the nitrogen in oxide bulk degrades the electric field of 10-year TDDB by 1 MV/cm. LOCOSiC isolation also degrades the electric field by 0.3 MV/cm. The breakdown positions of the LOCOSiC isolation sample distribute along the periphery of the isolation because the gate oxide grown on the Ar ion implantation induced damaged zone is poor. Fortunately, the TDDB degradation due to LOCOSiC process is not sever and the 10-year TDDB electric field of 6 MV/cm is acceptable in most applications.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728161693
DOIs
StatePublished - 20 Jul 2020
Event2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore
Duration: 20 Jul 202023 Jul 2020

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2020-July

Conference

Conference2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
CountrySingapore
CitySingapore
Period20/07/2023/07/20

Keywords

  • 4H-SiC
  • gate oxide
  • isolation
  • time-dependent dielectric breakdown

Fingerprint Dive into the research topics of 'Time-Dependent Dielectric Breakdown of Gate Oxide on 4H-SiC with Different Oxidation and Isolation Processes'. Together they form a unique fingerprint.

Cite this