Time dependence of fully-depleted SOI MOSFET's subthreshold current

F. Assad Eraghi*, J. Chen, R. Solomon, T. Chan, P. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

It is shown that the subthreshold current and the threshold voltage of fully-depleted SOI (silicon-on-insulator) MOSFETs show a time-dependent behavior under certain front-gate and back-gate voltage conditions. An explanation for this behavior is provided. The SOI devices used in the study were MOSFETs on SIMOX (separation by implanted oxygen) wafers. The gate oxide thickness, silicon film thickness, and buried oxide thickness were approximately 118 angstrom, 700 angstrom, and 4000 angstrom respectively. The doping concentration was 2 × 1017 cm-3.

Original languageEnglish
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Pages32-33
Number of pages2
ISBN (Print)0780301846
DOIs
StatePublished - 1 Jan 1992
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: 1 Oct 19913 Oct 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings

Conference

Conference1991 IEEE International SOI Conference
CityVail Valley, CO, USA
Period1/10/913/10/91

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