Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate

Matteo Meneghini*, Carlo De Santi, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni, Gaudenzio Meneghesso

*Corresponding author for this work

Research output: Contribution to journalArticle

69 Scopus citations

Abstract

This letter describes an extensive analysis of the time-and field-dependent trapping processes that occur in GaN-based gate injection transistors exposed to high drain voltage levels. Results indicate thateven if the devices do not suffer from current collapsecontinuous exposure to high drain voltages can induce a remarkable increase in the on-resistance (R on). The increase in R on can be recovered by leaving the device in rest conditions: Temperature-dependent analysis indicates that the activation energy of the detrapping process is equal to 0.47 eV. By time-resolved electroluminescence characterization, we show that this effect is related to the capture of electrons in the gate-drain access region. Finally, we show that charge emission can be significantly accelerated through the injection of holes from the gate.

Original languageEnglish
Article number6151017
Pages (from-to)375-377
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number3
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Current collapse
  • gallium nitride
  • trapping

Fingerprint Dive into the research topics of 'Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate'. Together they form a unique fingerprint.

  • Cite this

    Meneghini, M., De Santi, C., Ueda, T., Tanaka, T., Ueda, D., Zanoni, E., & Meneghesso, G. (2012). Time-and field-dependent trapping in GaN-based enhancement-mode transistors with p-gate. IEEE Electron Device Letters, 33(3), 375-377. [6151017]. https://doi.org/10.1109/LED.2011.2181815