TiC films formed by multi-stacking process for diamond contact metal electrodes

Y. Tanaka; K. Kakushima; P. Ahmet; Y. Kataoka; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; S. Yamasaki; H. Iwai

doi:10.1149/05006.0335ecst

TiC films formed by multi-stacking process for diamond contact metal electrodes

Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, S. Yamasaki, H. Iwai

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.

Original language	English
Title of host publication	Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages	335-340
Number of pages	6
Edition	6
DOIs	https://doi.org/10.1149/05006.0335ecst
State	Published - 2012
Event	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Publication series

Name	ECS Transactions
Number	6
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
Country	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

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Tanaka, Y., Kakushima, K., Ahmet, P., Kataoka, Y., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Yamasaki, S., & Iwai, H. (2012). TiC films formed by multi-stacking process for diamond contact metal electrodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012 (6 ed., pp. 335-340). (ECS Transactions; Vol. 50, No. 6). https://doi.org/10.1149/05006.0335ecst

Tanaka, Y. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Y. ; Tsutsui, K. ; Nishiyama, A. ; Sugii, N. ; Natori, K. ; Hattori, T. ; Yamasaki, S. ; Iwai, H. / TiC films formed by multi-stacking process for diamond contact metal electrodes. Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. 2012. pp. 335-340 (ECS Transactions; 6).

@inproceedings{42c42bdbcee74bd19cb53a6a93fffb66,

title = "TiC films formed by multi-stacking process for diamond contact metal electrodes",

abstract = "TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.",

author = "Y. Tanaka and K. Kakushima and P. Ahmet and Y. Kataoka and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and S. Yamasaki and H. Iwai",

year = "2012",

doi = "10.1149/05006.0335ecst",

language = "English",

isbn = "9781607683544",

series = "ECS Transactions",

number = "6",

pages = "335--340",

booktitle = "Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012",

edition = "6",

note = "null ; Conference date: 07-10-2012 Through 12-10-2012",

}

Tanaka, Y, Kakushima, K, Ahmet, P, Kataoka, Y, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T, Yamasaki, S & Iwai, H 2012, TiC films formed by multi-stacking process for diamond contact metal electrodes. in Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 edn, ECS Transactions, no. 6, vol. 50, pp. 335-340, Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05006.0335ecst

TiC films formed by multi-stacking process for diamond contact metal electrodes. / Tanaka, Y.; Kakushima, K.; Ahmet, P.; Kataoka, Y.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Yamasaki, S.; Iwai, H.

Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6. ed. 2012. p. 335-340 (ECS Transactions; Vol. 50, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - TiC films formed by multi-stacking process for diamond contact metal electrodes

AU - Tanaka, Y.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Kataoka, Y.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Yamasaki, S.

AU - Iwai, H.

PY - 2012

Y1 - 2012

N2 - TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.

AB - TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.

UR - http://www.scopus.com/inward/record.url?scp=84885706480&partnerID=8YFLogxK

U2 - 10.1149/05006.0335ecst

DO - 10.1149/05006.0335ecst

M3 - Conference contribution

AN - SCOPUS:84885706480

SN - 9781607683544

T3 - ECS Transactions

SP - 335

EP - 340

BT - Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012

Y2 - 7 October 2012 through 12 October 2012

ER -

Tanaka Y, Kakushima K, Ahmet P, Kataoka Y, Tsutsui K, Nishiyama A et al. TiC films formed by multi-stacking process for diamond contact metal electrodes. In Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012. 6 ed. 2012. p. 335-340. (ECS Transactions; 6). https://doi.org/10.1149/05006.0335ecst

TiC films formed by multi-stacking process for diamond contact metal electrodes

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