TiC films formed by multi-stacking process for diamond contact metal electrodes

Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, S. Yamasaki, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.

Original languageEnglish
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages335-340
Number of pages6
Edition6
DOIs
StatePublished - 2012
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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