TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.
|Title of host publication||Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012|
|Number of pages||6|
|State||Published - 2012|
|Event||Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States|
Duration: 7 Oct 2012 → 12 Oct 2012
|Conference||Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012|
|Period||7/10/12 → 12/10/12|