Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu; Tai Ming Lin; Hong Quan Nguyen; Yu Chen Weng; Chi Lang Nguyen; Yueh Chin Lin; Hung Wei Yu; Edward Yi Chang; Ching Ting Lee

doi:10.1116/1.4862165

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Yu Sheng Chiu, Tai Ming Lin, Hong Quan Nguyen, Yu Chen Weng, Chi Lang Nguyen, Yueh Chin Lin, Hung Wei Yu, Edward Yi Chang^*, Ching Ting Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (R_c) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low R_c.

Original language	English
Article number	011216
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	32
Issue number	1
DOIs	https://doi.org/10.1116/1.4862165
State	Published - 1 Jan 2014

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Chiu, Y. S., Lin, T. M., Nguyen, H. Q., Weng, Y. C., Nguyen, C. L., Lin, Y. C., Yu, H. W., Yi Chang, E., & Lee, C. T. (2014). Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 32(1), [011216]. https://doi.org/10.1116/1.4862165

Chiu, Yu Sheng ; Lin, Tai Ming ; Nguyen, Hong Quan ; Weng, Yu Chen ; Nguyen, Chi Lang ; Lin, Yueh Chin ; Yu, Hung Wei ; Yi Chang, Edward ; Lee, Ching Ting. / Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2014 ; Vol. 32, No. 1.

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title = "Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance",

abstract = "Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.",

author = "Chiu, {Yu Sheng} and Lin, {Tai Ming} and Nguyen, {Hong Quan} and Weng, {Yu Chen} and Nguyen, {Chi Lang} and Lin, {Yueh Chin} and Yu, {Hung Wei} and {Yi Chang}, Edward and Lee, {Ching Ting}",

year = "2014",

month = jan,

day = "1",

doi = "10.1116/1.4862165",

language = "English",

volume = "32",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

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Chiu, YS, Lin, TM, Nguyen, HQ, Weng, YC, Nguyen, CL, Lin, YC, Yu, HW , Yi Chang, E & Lee, CT 2014, 'Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 32, no. 1, 011216. https://doi.org/10.1116/1.4862165

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance. / Chiu, Yu Sheng; Lin, Tai Ming; Nguyen, Hong Quan; Weng, Yu Chen; Nguyen, Chi Lang; Lin, Yueh Chin; Yu, Hung Wei ; Yi Chang, Edward; Lee, Ching Ting.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 1, 011216, 01.01.2014.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

AU - Chiu, Yu Sheng

AU - Lin, Tai Ming

AU - Nguyen, Hong Quan

AU - Weng, Yu Chen

AU - Nguyen, Chi Lang

AU - Lin, Yueh Chin

AU - Yu, Hung Wei

AU - Yi Chang, Edward

AU - Lee, Ching Ting

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

AB - Optimizing surface morphology of ohmic contacts on GaN high electron mobility transistors continues to be a challenge in the GaN electronics industry. In this study, a variety of metal schemes were tested under various annealing conditions to obtain contacts with optimal qualities. A Ti/Al/Ti/Ni/Au (20/120/40/60/50 nm) metal scheme demonstrated the lowest contact resistance (Rc) and a smooth surface morphology, and the mechanisms were investigated by materials analysis. A Ti/Al/Ti/Ni/Au metal scheme with optimized Ti and Ni thicknesses can result in formation of a larger proportion of Al-Ni intermetallics and a continuous TiN interlayer, which results in smooth surface and low Rc.

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JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 011216

ER -

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

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