Ti5Si3 nanowire and its field emission property

Huang Kai Lin, Yu Fen Tzeng, Chia Hsin Wang, Nyan Hwa Tai, I. Nan Lin, Chi Young Lee*, Hsin-Tien Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

54 Scopus citations

Abstract

A study was conducted to demonstrate the growth of Ti5Si 3 nanowires (NW) through a chemical vapor deposition (CVD) process. The study also focused on providing detailed discussions of microstructures and field emission properties of the NWs. All reactions involved in the study were performed in low-pressure horizontal hot-wall quartz tube reactor that was heated by a three-zone tube furnace. TiCl4 was used as the precursor, which was vaporized into the reaction chamber at a controlled partial pressure. An energy dispersive X-ray (EDX) indicated that the sample contained Ti and Si, while scanning electron microscope images several NWs of a few micrometers in length extended randomly from the top of a deposited film, with a thickness of around 6 μm on Si.

Original languageEnglish
Pages (from-to)2429-2431
Number of pages3
JournalChemistry of Materials
Volume20
Issue number7
DOIs
StatePublished - 8 Apr 2008

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