A study was conducted to demonstrate the growth of Ti5Si 3 nanowires (NW) through a chemical vapor deposition (CVD) process. The study also focused on providing detailed discussions of microstructures and field emission properties of the NWs. All reactions involved in the study were performed in low-pressure horizontal hot-wall quartz tube reactor that was heated by a three-zone tube furnace. TiCl4 was used as the precursor, which was vaporized into the reaction chamber at a controlled partial pressure. An energy dispersive X-ray (EDX) indicated that the sample contained Ti and Si, while scanning electron microscope images several NWs of a few micrometers in length extended randomly from the top of a deposited film, with a thickness of around 6 μm on Si.