THz emission from InN

Hyeyoung Ahn*, Yi Jou Ye, Yu Liang Hong, Shangjr Gwo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the terahertz (THz) emission from the wurzite indium nitride (InN) films grown by molecular beam epitaxy (MBE). More than two orders of magnitude of THz power enhancement has been achieved from the InN film grown along the a-axis and magnesium (Mg) doped InN with a critical carrier concentration. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a-axis. Apparent azimuthal angle dependences of THz wave amplitude and the second harmonic generation are observed from a-plane InN. In the Mg-doped films, Mg as the acceptors compensate the native donors in the InN films and large band bending over a wider space-charge region causes the enhancement of THz emission power compared to the undoped InN.

Original languageEnglish
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages141-150
Number of pages10
DOIs
StatePublished - 7 Jul 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: 30 Nov 20094 Dec 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1202
ISSN (Print)0272-9172

Conference

Conference2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period30/11/094/12/09

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