Through-silicon-via characterization and modeling using a novel one-port de-embedding technique

An Sam Peng, Ming Hsiang Cho, Yueh Hua Wang, Meng Fang Wang, David Chen, Lin-Kun Wu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this deembedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20 GHz.

Original languageEnglish
Pages (from-to)1289-1293
Number of pages5
JournalIEICE Transactions on Electronics
Issue number10
StatePublished - 1 Jan 2013


  • 3D IC
  • De-embedding
  • Microwave
  • RF modeling
  • TEGs
  • TSV

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