A closed analytical model with rectangular and triangular potential approximation was developed to measure threshold voltage shift in ultra-thin body (UTB) devices. The threshold voltage shift was caused by the confinement effect of the thin body in the UTB device. The threshold voltage of the thick-body UTB device was larger due to sub-band splitting. The threshold voltage shift was found to be larger in double gate devices than in single gate devices.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||Device Research Conference (DRC) - Notre Dame, IN, United States|
Duration: 25 Jun 2001 → 27 Jun 2001
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||25/06/01 → 27/06/01|