Threshold voltage shift by quantum confinement in ultra-thin body device

Y. K. Choi*, D. Ha, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

4 Scopus citations

Abstract

A closed analytical model with rectangular and triangular potential approximation was developed to measure threshold voltage shift in ultra-thin body (UTB) devices. The threshold voltage shift was caused by the confinement effect of the thin body in the UTB device. The threshold voltage of the thick-body UTB device was larger due to sub-band splitting. The threshold voltage shift was found to be larger in double gate devices than in single gate devices.

Original languageEnglish
Pages85-86
Number of pages2
DOIs
StatePublished - 1 Jan 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 25 Jun 200127 Jun 2001

Conference

ConferenceDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period25/06/0127/06/01

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    Choi, Y. K., Ha, D., King, T. J., & Hu, C-M. (2001). Threshold voltage shift by quantum confinement in ultra-thin body device. 85-86. Paper presented at Device Research Conference (DRC), Notre Dame, IN, United States. https://doi.org/10.1109/DRC.2001.937884