Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation

C. Chung; D. Kobayashi; K. Hirose

doi:10.1109/IRPS.2018.8353585

Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation

C. Chung, D. Kobayashi, K. Hirose

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Thin-BOX SOI technology is drawing attention for its low soft error sensitivity. Terrestrial radiation tests already demonstrated its further reduction under back-bias conditions. However, recent heavy ion tests with SRAMs exhibited the opposite result, a 100-fold increase accompanying 10-bits-long line-type multi-cell upsets, when they were biased. This work proposes a metal bridge model, suggesting that this difference in response to the back-bias conditioning stems from the difference in ion parameters such as range and linear energy transfer.

Original language	English
Title of host publication	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	4C.31-4C.36
ISBN (Electronic)	9781538654798
DOIs	https://doi.org/10.1109/IRPS.2018.8353585
State	Published - 25 May 2018
Event	2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States Duration: 11 Mar 2018 → 15 Mar 2018

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2018-March
ISSN (Print)	1541-7026

Conference

Conference	2018 IEEE International Reliability Physics Symposium, IRPS 2018
Country	United States
City	Burlingame
Period	11/03/18 → 15/03/18

Keywords

ion radiation effects
silicon-on-insulator
single-event upsets
Soft errors
SRAM

Access to Document

10.1109/IRPS.2018.8353585

Link to publication in Scopus

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Chung, C., Kobayashi, D., & Hirose, K. (2018). Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. 4C.31-4C.36). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353585

Chung, C. ; Kobayashi, D. ; Hirose, K. / Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs : Difference between sensitivities to terrestrial and space radiation. 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 4C.31-4C.36 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "Thin-BOX SOI technology is drawing attention for its low soft error sensitivity. Terrestrial radiation tests already demonstrated its further reduction under back-bias conditions. However, recent heavy ion tests with SRAMs exhibited the opposite result, a 100-fold increase accompanying 10-bits-long line-type multi-cell upsets, when they were biased. This work proposes a metal bridge model, suggesting that this difference in response to the back-bias conditioning stems from the difference in ion parameters such as range and linear energy transfer.",

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Chung, C, Kobayashi, D & Hirose, K 2018, Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. in 2018 IEEE International Reliability Physics Symposium, IRPS 2018. IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, Institute of Electrical and Electronics Engineers Inc., pp. 4C.31-4C.36, 2018 IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, United States, 11/03/18. https://doi.org/10.1109/IRPS.2018.8353585

Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs : Difference between sensitivities to terrestrial and space radiation. / Chung, C.; Kobayashi, D.; Hirose, K.

2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 4C.31-4C.36 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Chung C, Kobayashi D, Hirose K. Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 4C.31-4C.36. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2018.8353585