@inproceedings{3eb5fd0314114d2aa9369dac7fceb642,
title = "Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation",
abstract = "Thin-BOX SOI technology is drawing attention for its low soft error sensitivity. Terrestrial radiation tests already demonstrated its further reduction under back-bias conditions. However, recent heavy ion tests with SRAMs exhibited the opposite result, a 100-fold increase accompanying 10-bits-long line-type multi-cell upsets, when they were biased. This work proposes a metal bridge model, suggesting that this difference in response to the back-bias conditioning stems from the difference in ion parameters such as range and linear energy transfer.",
keywords = "ion radiation effects, silicon-on-insulator, single-event upsets, Soft errors, SRAM",
author = "C. Chung and D. Kobayashi and K. Hirose",
year = "2018",
month = may,
day = "25",
doi = "10.1109/IRPS.2018.8353585",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "4C.31--4C.36",
booktitle = "2018 IEEE International Reliability Physics Symposium, IRPS 2018",
address = "United States",
note = "null ; Conference date: 11-03-2018 Through 15-03-2018",
}