Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation

C. Chung, D. Kobayashi, K. Hirose

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Thin-BOX SOI technology is drawing attention for its low soft error sensitivity. Terrestrial radiation tests already demonstrated its further reduction under back-bias conditions. However, recent heavy ion tests with SRAMs exhibited the opposite result, a 100-fold increase accompanying 10-bits-long line-type multi-cell upsets, when they were biased. This work proposes a metal bridge model, suggesting that this difference in response to the back-bias conditioning stems from the difference in ion parameters such as range and linear energy transfer.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4C.31-4C.36
ISBN (Electronic)9781538654798
DOIs
StatePublished - 25 May 2018
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 11 Mar 201815 Mar 2018

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period11/03/1815/03/18

Keywords

  • ion radiation effects
  • silicon-on-insulator
  • single-event upsets
  • Soft errors
  • SRAM

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    Chung, C., Kobayashi, D., & Hirose, K. (2018). Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation. In 2018 IEEE International Reliability Physics Symposium, IRPS 2018 (pp. 4C.31-4C.36). (IEEE International Reliability Physics Symposium Proceedings; Vol. 2018-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2018.8353585