Three-transistor AMOLED pixel circuit with threshold voltage compensation function using dual-gate IGZO TFT

Ya-Hsiang Tai*, Lu Sheng Chou, Hao Lin Chiu, Bo Cheng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

In addition to the gate electrode at the bottom, a dual-gate amorphous InGaZnO4 thin-film transistor (TFT) has a secondary gate electrode on the top. The threshold voltage (Vth) of the TFT using the bottom gate in its normal operation can be controlled by the top gate. Based on this phenomenon, a simple circuit of active-matrix organic light-emitting diode using the top gate to compensate threshold voltage variation is proposed. This new pixel circuit uses only three TFTs and two capacitors. The validity of Vth compensation is verified experimentally.

Original languageEnglish
Article number6127899
Pages (from-to)393-395
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number3
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Active-matrix organic light-emitting diode (AMOLED)
  • dual-gate amorphous InGaZnO4 (a-IGZO) thin-film transistor (TFT)
  • threshold voltage (Vth) compensation circuit

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