Three-dimensional simulation of random-dopant-induced threshold voltage fluctuation in nanoscale fin-typed field effect transistors

Yiming Li*, Chih Hong Hwang, Shao Ming Yu, Hsuan Ming Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanoscale multiple-gate fin-typed field effect transistors (FinFETs) are promising candidates for next generation semiconductor devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, we study the discrete-dopant-induced potential and threshold voltage fluctuations in 16nm triple-gate FinFET devices. Discrete dopants are statistically positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". It is found that the inhomogeneity of the potential induced by the discreteness of the channel dopants significantly disturbs device threshold voltage, and thus the device characteristics. This study provides an insight into the source of fluctuation and fluctuations induced by discrete dopants in ultra-small field effect transistors with vertical channel structures.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages387-390
Number of pages4
DOIs
StatePublished - 2007
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 9 Sep 200714 Sep 2007

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference19th International Conference on Noise and Fluctuations, ICNF2007
CountryJapan
CityTokyo
Period9/09/0714/09/07

Keywords

  • 3D "atomistic" Technique
  • Discrete Dopant
  • FinFET
  • Fluctuation
  • Large-Scale Modeling and Simulation
  • Nanoscale Transistor
  • Statistical Analysis

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    Li, Y., Hwang, C. H., Yu, S. M., & Huang, H. M. (2007). Three-dimensional simulation of random-dopant-induced threshold voltage fluctuation in nanoscale fin-typed field effect transistors. In Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007 (pp. 387-390). (AIP Conference Proceedings; Vol. 922). https://doi.org/10.1063/1.2759705