TY - GEN
T1 - Three-dimensional numerical simulation of switching dynamics for cylindrical-shaped phase change memory
AU - Li, Yiming
AU - Hwang, Chih Hong
AU - Kuo, Yi Ting
AU - Cheng, Hui Wen
PY - 2008
Y1 - 2008
N2 - Novel chalcogenide-based phase change memory (PCM) is a promising candidate for next-generation non-volatile solid-state memory technology for its high resistance contrast, better endurance and writing speeds than flash memory. PCM cell stores data by a thermally induced phase transition between conductive poly crystalline (set) and resistive amorphous (reset) states, in a thin film of chalcogenide materials, such as GeSbTe (GST) alloy. Therefore, the determination of the maximum temperature of GST material is crucial in design and technology of PCM. In this study, a three-dimensional electro-thermal time-domain simulation is conducted for dynamic thermal analysis of the cylindrical PCMs, where the structure GST is a cone with different cone angle, ranging from 90° to 45°. Our preliminary result shows the relation between contact size of GST and required programming current for GST phase transition. The GST with 90° angle exhibits the smallest required programming current than the others. The angle and contact size of GST will modify the distribution of temperature and alters the maximum temperature of the GST material. This study quantitatively estimates the structure effect on phase transition of PCM and physically provides an insight into design and technology of PCMs.
AB - Novel chalcogenide-based phase change memory (PCM) is a promising candidate for next-generation non-volatile solid-state memory technology for its high resistance contrast, better endurance and writing speeds than flash memory. PCM cell stores data by a thermally induced phase transition between conductive poly crystalline (set) and resistive amorphous (reset) states, in a thin film of chalcogenide materials, such as GeSbTe (GST) alloy. Therefore, the determination of the maximum temperature of GST material is crucial in design and technology of PCM. In this study, a three-dimensional electro-thermal time-domain simulation is conducted for dynamic thermal analysis of the cylindrical PCMs, where the structure GST is a cone with different cone angle, ranging from 90° to 45°. Our preliminary result shows the relation between contact size of GST and required programming current for GST phase transition. The GST with 90° angle exhibits the smallest required programming current than the others. The angle and contact size of GST will modify the distribution of temperature and alters the maximum temperature of the GST material. This study quantitatively estimates the structure effect on phase transition of PCM and physically provides an insight into design and technology of PCMs.
UR - http://www.scopus.com/inward/record.url?scp=55849135178&partnerID=8YFLogxK
U2 - 10.1109/CSEW.2008.41
DO - 10.1109/CSEW.2008.41
M3 - Conference contribution
AN - SCOPUS:55849135178
SN - 9780769532578
T3 - Proceedings of the 11th IEEE International Conference on Computational Science and Engineering, CSE Workshops 2008
SP - 324
EP - 327
BT - Proceedings of the 11th IEEE International Conference on Computational Science and Engineering, CSE Workshops 2008
Y2 - 16 July 2008 through 18 July 2008
ER -