Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy

Heng Li, Hui Yu Cheng, Wei Liang Chen, Yi Hsin Huang, Chi Kang Li, Chiao Yun Chang, Yuh Renn Wu, Tien-chang Lu, Yu Ming Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution.

Original languageEnglish
Title of host publication22nd Microoptics Conference, MOC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages308-309
Number of pages2
ISBN (Electronic)9784863486096
DOIs
StatePublished - 19 Nov 2017
Event22nd Microoptics Conference, MOC 2017 - Tokyo, Japan
Duration: 19 Nov 201722 Nov 2017

Publication series

Name22nd Microoptics Conference, MOC 2017
Volume2017-November

Conference

Conference22nd Microoptics Conference, MOC 2017
CountryJapan
CityTokyo
Period19/11/1722/11/17

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