Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

Heng Li, Hui Yu Cheng, Wei Liang Chen, Yi Hsin Huang, Chi Kang Li, Chiao Yun Chang, Yuh Renn Wu, Tien-Chang Lu*, Yu Ming Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In x Ga 1-x N/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E 2 (high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the In x Ga 1-x N/GaN MQWs active layer.

Original languageEnglish
Article number45519
JournalScientific reports
Volume7
DOIs
StatePublished - 30 Mar 2017

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