Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In 0.5Ga 0.5As and In 0.3Ga 0.7As on GaAs substrate by using metal organic chemical vapor deposition

Hong Quan Nguyen*, Edward Yi Chang, Hung Wei Yu, Hai Dang Trinh, Chang Fu Dee, Yuen Yee Wong, Ching Hsiang Hsu, Binh Tinh Tran, Chen Chen Chung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

High quality In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In 0.3Ga 0.7As and In 0.51Ga 0.49As epilayers. ATD density of 1 × 10 6cm -2 in a fully relaxed In 0.51Ga 0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In 0.51Ga 0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown.

Original languageEnglish
Article number055503
JournalApplied Physics Express
Volume5
Issue number5
DOIs
StatePublished - 1 May 2012

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