Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing

Chia Cheng Wu, Ray-Hua Horng*, Dong Sing Wuu, Tsai Ning Chen, Shih Shian Ho, Chia Jen Ting, Hung Yin Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO 3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO 3 substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.

Original languageEnglish
Pages (from-to)3822-3827
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
StatePublished - 25 Apr 2006

Keywords

  • Chemical mechanical polishing
  • Lithium niobate (LiNbO) substrate
  • Plasma
  • Wafer bonding

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