Thin Oxide Charging Current During Plasma Etching of Aluminum

H. Shin, C. C. King, T. Horiuchi, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

CV measurement is shown to be a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown. Plasma charging current was deduced by reproducing the CV degradation by constant current stressing. The charging current is found to increase in proportion to the periphery rather than to the area of the “antenna.”

Original languageEnglish
Pages (from-to)404-406
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number8
DOIs
StatePublished - 1 Jan 1991

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