Thin film solar cells fabricated using cross-shaped pattern epilayer lift-off technology for substrate recycling applications

Ray-Hua Horng*, Ming Chun Tseng, Fan Lei Wu, Chia Hao Li, Chih Hung Wu, Min De Yang

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

This study reports the use of cross-shaped pattern epitaxial lift-off (ELO) technology to release crack-free single crystal epilayers with a solar cell structure from a gallium arsenide (GaAs) substrate. A cross-shaped pattern array was used to define cell size and provide the etch path for the etchant solution. AlAs was used as a sacrificial layer and etched using a hydrofluoric acid etchant through the cross-shaped hole. Results indicate that the entire wafer can be etched simultaneously. The desired carrier, i.e., the electroplate nickel substrate, can directly contact the epilayer without wax or low-viscosity epoxy, and can also be applied to an external force through magnetic attraction to decrease the release time. After the cross-shaped pattern ELO process, the separated GaAs substrate can be recycled through chemical cleaning. The performance of solar cells grown on new and recycled GaAs substrates remained above 90% of the initial performance when the substrate was recycled less than three times.

Original languageEnglish
Article number6127910
Pages (from-to)666-672
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume59
Issue number3
DOIs
StatePublished - 1 Mar 2012

Keywords

  • Epitaxial lift-off (ELO)
  • recycled substrate
  • thin film solar cell

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