Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers

M. W. Liang, Tsung-Eong Hsien, S. Y. Chang, T. H. Chuang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) η-(Cu0.99Au0.01)6Sn5/δ-(Au 0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)6Sn5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm2 could be attained under the bonding condition of 300°C for 20 min.

Original languageEnglish
Pages (from-to)952-956
Number of pages5
JournalJournal of Electronic Materials
Issue number9
StatePublished - 1 Jan 2003


  • Bonding strength
  • Die attachment
  • Diffusion soldering
  • Intermetallic compounds
  • Kinetics analysis

Fingerprint Dive into the research topics of 'Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al<sub>2</sub>O<sub>3</sub> with Sn interlayers'. Together they form a unique fingerprint.

Cite this