Thin film GaN LEDs using a patterned oxide sacrificial layer by chemical lift-off process

Shih Hao Chuang, Chun Ting Pan, Kun Ching Shen, Sin Liang Ou, Dong Sing Wuu, Ray-Hua Horng

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide SiO 2 as a sacrificial layer in a chemical lift-off (CLO) process. The SiO 2 strip patterns not only provide the sacrificial structure during the detachment process, but also improve the quality of GaN epilayers through epitaxial lateral overgrowth. Compared with conventional LEDs, the CLO-LEDs have a higher output power and a lower forward voltage. The CLO-LED has a decrease in forward voltage of 0.42 V (at 20 mA) as compared with the conventional LED. In addition, at a drive current of 350 mA, the output power of CLO-LEDs is enhanced SiO 2 fold, compared with that of conventional LEDs.

Original languageEnglish
Article number6654253
Pages (from-to)2435-2438
Number of pages4
JournalIEEE Photonics Technology Letters
Volume25
Issue number24
DOIs
StatePublished - 15 Dec 2013

Keywords

  • Chemical lift-off
  • electroplating
  • epitaxial lateral overgrowth
  • light-emitting diode (LED)
  • strip-patterned SiO

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