Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Yi Gin Yang, Bing Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.

Original languageEnglish
Title of host publication2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973750
DOIs
StatePublished - 3 Jun 2015
Event2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
Duration: 27 Apr 201529 Apr 2015

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Volume2015-June
ISSN (Print)1930-8868

Conference

Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
CountryTaiwan
CityHsinchu
Period27/04/1529/04/15

Fingerprint Dive into the research topics of 'Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al<sub>2</sub>O<sub>3</sub> intermediate layer'. Together they form a unique fingerprint.

  • Cite this

    Yang, Y. G., & Tsui, B. Y. (2015). Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer. In 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 [7117579] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; Vol. 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2015.7117579