Silicon-on-Insulator (SOI) is becoming more attractive for enhancing performance as MOSFET physical dimensions are scaled down. In this work, a 0.5 micron process using bonded SOI material is compared to bulk CMOS. The comparisons include electrical parameters, delay time, and speed power product.
|State||Published - 1 Jan 1994|
|Event||1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan|
Duration: 12 Jul 1994 → 15 Jul 1994
|Conference||1994 International Electron Devices and Materials Symposium, EDMS 1994|
|Period||12/07/94 → 15/07/94|