Thin bonded wafer SOI CMOS technology for low voltage high performance applications

E. D. Nowak, L. Ding, Y. T. Loh, Chen-Ming Hu

Research output: Contribution to conferencePaperpeer-review

Abstract

Silicon-on-Insulator (SOI) is becoming more attractive for enhancing performance as MOSFET physical dimensions are scaled down. In this work, a 0.5 micron process using bonded SOI material is compared to bulk CMOS. The comparisons include electrical parameters, delay time, and speed power product.

Original languageEnglish
DOIs
StatePublished - 1 Jan 1994
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 12 Jul 199415 Jul 1994

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period12/07/9415/07/94

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