Thin-body FinFET as scalable low voltage transistor

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.

Original languageEnglish
Title of host publication2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Proceedings of Technical Papers
DOIs
StatePublished - 16 Jul 2012
Event2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 - Hsinchu, Taiwan
Duration: 23 Apr 201225 Apr 2012

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
ISSN (Print)1930-8868

Conference

Conference2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012
CountryTaiwan
CityHsinchu
Period23/04/1225/04/12

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