Thickness scaling and reliability comparison for the inter-poly high-κ dielectrics

Yung Yu Chen*, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


In this letter, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with conventional oxide/nitride/oxide (ONO) IPD. Regardless of deposition tools, drastic leakage current reduction and reliability improvement have been demonstrated by replacing ONO IPD with highpermittivity (high-κ) IPDs, which is suitable for mass production applications in the future. Moreover, metal-organic chemical vapor deposition (MOCVD) can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using the MOCVD, the charge-to-breakdown (QBD) can be significantly improved, in addition to enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that high-κ IPD, particularly deposited by MOCVD, possesses great potential for next-generation stacked-gate Flash memories.

Original languageEnglish
Pages (from-to)700-702
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2007


  • High-κ dielectric
  • Inter-poly dielectric (IPD)
  • Metal-organic chemical vapor deposition (MOCVD)

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