Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs

Li Chung Cheng, Chiung Yi Huang, Ray-Hua Horng*

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The device mechanism from depletion to enhancement mode for ZnGa2O4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the ZnGa2O4 thin-film would affect the operational mode of the MOSFETs. Under the low-voltage operation (VDS = 0.5V), the transistors exhibited a high on/off ratio from 107 to 104, low subthreshold swing from 150 to 330 mV/dec, high field-effect mobility from 4.2 to 0.054 cm2/V-s and threshold voltages from -17.8 to 4.1 V (using constant current = 1 nA). These electrical properties all depend on the thickness of the ZnGa2O4 thin-film transistors. Finally, the e-mode ZnGa2O4 thin-film transistor with off-state breakdown voltage over 400 V is fabricated.

Original languageEnglish
Pages (from-to)432-437
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
StatePublished - 1 Jan 2018

Keywords

  • MOSFETs
  • ZnGaO
  • breakdown voltage
  • enhancement mode
  • thickness effect

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