Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Y. H. Wu; Albert Chin; W. J. Chen

doi:10.1109/55.843153

Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Y. H. Wu^*, Albert Chin, W. J. Chen

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

For thin oxides grown on high temperature formed Si_0.3Ge_0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 angstroms. The thinner 30 angstroms oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si_0.3Ge_0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO₂ content formed in thinner 30 angstroms oxide rather than strain relaxation related rough surface or defects.

Original language	English
Pages (from-to)	289-291
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/55.843153
State	Published - 1 Jun 2000

Access to Document

10.1109/55.843153

Fingerprint Dive into the research topics of 'Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe'. Together they form a unique fingerprint.

Cite this

@article{ab80c3fecf764915919fed29bb41cc19,

title = "Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe",

abstract = "For thin oxides grown on high temperature formed Si0.3Ge0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 angstroms. The thinner 30 angstroms oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si0.3Ge0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO2 content formed in thinner 30 angstroms oxide rather than strain relaxation related rough surface or defects.",

author = "Wu, {Y. H.} and Albert Chin and Chen, {W. J.}",

year = "2000",

month = jun,

day = "1",

doi = "10.1109/55.843153",

language = "English",

volume = "21",

pages = "289--291",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

AU - Wu, Y. H.

AU - Chin, Albert

AU - Chen, W. J.

PY - 2000/6/1

Y1 - 2000/6/1

N2 - For thin oxides grown on high temperature formed Si0.3Ge0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 angstroms. The thinner 30 angstroms oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si0.3Ge0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO2 content formed in thinner 30 angstroms oxide rather than strain relaxation related rough surface or defects.

AB - For thin oxides grown on high temperature formed Si0.3Ge0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 angstroms. The thinner 30 angstroms oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si0.3Ge0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO2 content formed in thinner 30 angstroms oxide rather than strain relaxation related rough surface or defects.

UR - http://www.scopus.com/inward/record.url?scp=0033738002&partnerID=8YFLogxK

U2 - 10.1109/55.843153

DO - 10.1109/55.843153

M3 - Article

AN - SCOPUS:0033738002

VL - 21

SP - 289

EP - 291

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -

Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Abstract

Access to Document

Other files and links

Cite this