Thickness dependent gate oxide quality of thin thermal oxide grown on high temperature formed SiGe

Y. H. Wu*, Albert Chin, W. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

For thin oxides grown on high temperature formed Si0.3Ge0.7, the gate oxide quality is strongly dependent on oxide thickness and improves as thickness reduces from 50 to 30 angstroms. The thinner 30 angstroms oxide has excellent quality as evidenced by the comparable leakage current, breakdown voltage, interface-trap density and charge-to-breakdown with conventional thermal oxide grown on Si. The achieved good oxide quality is due to the high temperature formed Si0.3Ge0.7 that is strain relaxed and stable during oxidation. The possible reason for strong thickness dependence may be due to the lower GeO2 content formed in thinner 30 angstroms oxide rather than strain relaxation related rough surface or defects.

Original languageEnglish
Pages (from-to)289-291
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number6
DOIs
StatePublished - 1 Jun 2000

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