Thickness dependence of microstructure of laterally crystallized poly-Si thin films and electrical characteristics of low-temperature poly-Si TFTs

Ting Kuo Chang, Ching Wei Lin, Yuan Hsun Chang, Chang Ho Tseng, Fang Tsun Chu, Huang-Chung Cheng*, Li Jen Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effects of thickness of a-Si thin films on the resulting microstructure of metal-induced laterally crystallized (MILC) poly-Si and electrical characteristics of MILC low temperature poly-Si (LTPS) thin film transistors (TFTs) were investigated. The TEM images revealed a double-layer structure in the 1000-Å MILC poly-Si thin film. However, for the 400-Å MILC poly-Si thin film, there were single-layer grains within the thin film layer. The reason has been ascribed to the geometry restriction in the crystallization procedure. The average mobility of fabricated MILC LTPS TFTs with active layer thickness of 400 Å showed a little higher than that with 1000 Å active layer. Moreover, the MILC LTPS TFTs with active layer thickness of 400 Å exhibited better electrical uniformity than those with 1000 Å active layer either in threshold voltage or field-effect mobility. The reason should also be attributed to the different crystalline structures within the two thin-film layers.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume150
Issue number8
DOIs
StatePublished - 1 Aug 2003

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