In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO2/Si interface was about 0.2 nm and the YSZ/SiO2 interface was vary from 0.15 nm to about 1.5 nm.
|Number of pages||4|
|Journal||Key Engineering Materials|
|State||Published - 1 Dec 2000|