Thickness and roughness analysis on YSZ/Si(001) epitaxial films with ultra thin SiO2 interface by X-ray reflectivity

Chun-Hua Chen*, Naoki Wakiya, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO2/Si interface was about 0.2 nm and the YSZ/SiO2 interface was vary from 0.15 nm to about 1.5 nm.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalKey Engineering Materials
Volume181-182
DOIs
StatePublished - 1 Dec 2000

Keywords

  • Reflectivity
  • Roughness
  • Silicon
  • SiO
  • Thickness
  • X-Ray
  • YSZ

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