Thickness and other effects on oxide and interface damage by plasma processing

Hyungcheol Shin*, Ko Noguchi, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

Plasma induced oxide charging occurs mainly during the over-etch time. There is no measurable additional damage during the moment of plasma turn-on and off. Plasma acts more like a current source than a voltage source fortunately for future thinner oxide. There is a latent interface damage remaining after forming gas anneal. A discrepancy between the defect densities measured in test structures and in circuits are explained.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages272-279
Number of pages8
ISBN (Print)0780307828
DOIs
StatePublished - 1 Jan 1993
Event31st Annual Proceedings of the 1993 Reliability Physics - Atlanta, GA, USA
Duration: 23 Mar 199325 Mar 1993

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

Conference31st Annual Proceedings of the 1993 Reliability Physics
CityAtlanta, GA, USA
Period23/03/9325/03/93

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