Abstract
We use both the zero-magnetic-field resistivity and the phase coherence time determined by weak localization as independent thermometers for Dirac fermions (DF) in multilayer graphene. In the high current (I) region, there exists a simple power law T DF ∝ I ~0.5 , where T DF is the effective Dirac fermion temperature for epitaxial graphene on SiC. In contrast, T DF ∝ I ~1 in exfoliated multilayer graphene. We discuss possible reasons for the different power laws observed in these multilayer graphene systems. Our experimental results on DF-phonon scattering may find applications in graphene-based nanoelectronics.
Original language | English |
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Journal | Journal of the Korean Physical Society |
Volume | 66 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2015 |
Keywords
- Dirac fermions
- Graphene
- Thermometry
- Weak localization