Thermometry for Dirac fermions in graphene

Fan Hung Liu, Chang Shun Hsu, Shun-Tsung Lo, Chiashain Chuang, Lung I. Huang, Tak Pong Woo*, Chi Te Liang, Y. Fukuyama, Y. Yang, R. E. Elmquist, Pengjie Wang, Xi Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We use both the zero-magnetic-field resistivity and the phase coherence time determined by weak localization as independent thermometers for Dirac fermions (DF) in multilayer graphene. In the high current (I) region, there exists a simple power law T DF ∝ I ~0.5 , where T DF is the effective Dirac fermion temperature for epitaxial graphene on SiC. In contrast, T DF ∝ I ~1 in exfoliated multilayer graphene. We discuss possible reasons for the different power laws observed in these multilayer graphene systems. Our experimental results on DF-phonon scattering may find applications in graphene-based nanoelectronics.

Original languageEnglish
JournalJournal of the Korean Physical Society
Issue number1
StatePublished - 1 Jan 2015


  • Dirac fermions
  • Graphene
  • Thermometry
  • Weak localization

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