Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Oleg Korotchenkov, Andriy Nadtochiy, Vasyl Kuryliuk, Chin Chi Wang, Pei-Wen Li, Andres Cantarero

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO 2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ∼200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

Original languageEnglish
Article number64
JournalEuropean Physical Journal B
Volume87
Issue number3
DOIs
StatePublished - 1 Jan 2014

Fingerprint Dive into the research topics of 'Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces'. Together they form a unique fingerprint.

Cite this