Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

C. H. Chen*, Y. K. Fang, C. W. Yang, S. F. Ting, Y. S. Tsair, M. C. Yu, Tuo-Hung Hou, M. F. Wang, S. C. Chen, C. H. Yu, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Ultrathin thermally enhanced remote plasma nitrided oxides (TE-RPNO) with equivalent oxide thickness down to 1.65 nm are fabricated to investigate their leakage current reduction and boron diffusion barrier performances. PMOSFET with TE-RPNO, compared to its conventional oxide counter-part, yields almost one order magnitude lower gate leakage current, less flatband voltage changes in high boron implantation dose or activation temperature, and shows broader process windows in the tradeoff between boron penetration and dopant activation.

Original languageEnglish
Pages (from-to)378-380
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number8
DOIs
StatePublished - 1 Aug 2001

Keywords

  • Boron penetration
  • Remote plasma nitridation
  • RPN
  • Ultrathin

Fingerprint Dive into the research topics of 'Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion'. Together they form a unique fingerprint.

Cite this