Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment

Lih Hsin Chou; Wu Tzung Hsieh; Pu-Wei Wu

doi:10.1143/JJAP.32.L539

Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment

Lih Hsin Chou, Wu Tzung Hsieh, Pu-Wei Wu

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Hydrogenated amorphous carbon films have been prepared from plasma-enhanced chemical vapor deposition. Both the as-deposited films and those thermally annealed for two hours at 300 °C exhibited insulating characteristics. Neither a thermally activated process nor a hopping mechanism was observed for the conductivity. An increase occurred in the conductivity by an order of five after two hours of subsequent treatment under Ar plasma for both the as-deposited and thermally annealed films. In addition, thermally activated conductivity with an activation energy of around 0.3 eV was observed.

Original language	English
Pages (from-to)	L539-L542
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.32.L539
State	Published - 1 Jan 1993

Keywords

Ar plasma bombardment
O-C:H films
Thermally activated conductivity

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title = "Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment",

abstract = "Hydrogenated amorphous carbon films have been prepared from plasma-enhanced chemical vapor deposition. Both the as-deposited films and those thermally annealed for two hours at 300 °C exhibited insulating characteristics. Neither a thermally activated process nor a hopping mechanism was observed for the conductivity. An increase occurred in the conductivity by an order of five after two hours of subsequent treatment under Ar plasma for both the as-deposited and thermally annealed films. In addition, thermally activated conductivity with an activation energy of around 0.3 eV was observed.",

keywords = "Ar plasma bombardment, O-C:H films, Thermally activated conductivity",

author = "Chou, {Lih Hsin} and Hsieh, {Wu Tzung} and Pu-Wei Wu",

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AU - Chou, Lih Hsin

AU - Hsieh, Wu Tzung

AU - Wu, Pu-Wei

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Hydrogenated amorphous carbon films have been prepared from plasma-enhanced chemical vapor deposition. Both the as-deposited films and those thermally annealed for two hours at 300 °C exhibited insulating characteristics. Neither a thermally activated process nor a hopping mechanism was observed for the conductivity. An increase occurred in the conductivity by an order of five after two hours of subsequent treatment under Ar plasma for both the as-deposited and thermally annealed films. In addition, thermally activated conductivity with an activation energy of around 0.3 eV was observed.

AB - Hydrogenated amorphous carbon films have been prepared from plasma-enhanced chemical vapor deposition. Both the as-deposited films and those thermally annealed for two hours at 300 °C exhibited insulating characteristics. Neither a thermally activated process nor a hopping mechanism was observed for the conductivity. An increase occurred in the conductivity by an order of five after two hours of subsequent treatment under Ar plasma for both the as-deposited and thermally annealed films. In addition, thermally activated conductivity with an activation energy of around 0.3 eV was observed.

KW - Ar plasma bombardment

KW - O-C:H films

KW - Thermally activated conductivity

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M3 - Article

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SP - L539-L542

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 A

ER -

Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment

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Keywords

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