Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment

Lih Hsin Chou, Wu Tzung Hsieh, Pu-Wei Wu

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Hydrogenated amorphous carbon films have been prepared from plasma-enhanced chemical vapor deposition. Both the as-deposited films and those thermally annealed for two hours at 300 °C exhibited insulating characteristics. Neither a thermally activated process nor a hopping mechanism was observed for the conductivity. An increase occurred in the conductivity by an order of five after two hours of subsequent treatment under Ar plasma for both the as-deposited and thermally annealed films. In addition, thermally activated conductivity with an activation energy of around 0.3 eV was observed.

Original languageEnglish
Pages (from-to)L539-L542
JournalJapanese Journal of Applied Physics
Volume32
Issue number4 A
DOIs
StatePublished - 1 Jan 1993

Keywords

  • Ar plasma bombardment
  • O-C:H films
  • Thermally activated conductivity

Fingerprint Dive into the research topics of 'Thermally Activated Conductivity Of Hydrogenated Amorphous Carbon Films Induced By Argon Plasma Bombardment'. Together they form a unique fingerprint.

  • Cite this