The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapour deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C and shall be attributed to the generation of phosphorus vacancies (VP) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behaviour, thus allowing us to determine an appropriate process for manufacturing AlInP-based products.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 1 Aug 2001|
- Deep level
- Phosphorus vacancy