Thermal-treatment induced deep electron traps in AlInP

Wei Jer Sung*, Kai-Feng Huang, Wen Jen Lin, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapour deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500°C and shall be attributed to the generation of phosphorus vacancies (VP) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behaviour, thus allowing us to determine an appropriate process for manufacturing AlInP-based products.

Original languageEnglish
Pages (from-to)4864-4865
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number8
DOIs
StatePublished - 1 Aug 2001

Keywords

  • AlInP
  • Annealing
  • Deep level
  • Defect
  • DLTS
  • Phosphorus vacancy
  • Thermal-treatment

Fingerprint Dive into the research topics of 'Thermal-treatment induced deep electron traps in AlInP'. Together they form a unique fingerprint.

Cite this