Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction

Yu-Miin Sheu, S. H. Lee, J. K. Wahlstrand, D. A. Walko, E. C. Landahl, D. A. Arms, M. Reason, R. S. Goldman, D. A. Reis

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We report studies of thermal transport across the interface of a semiconductor heterostructure using x-ray diffraction to measure the time-dependent lattice expansion after ultrafast laser excitation. Femtosecond laser pulses are used to rapidly and locally heat the substrate at the buried interface of an Al0.3 Ga0.7 As/GaAs heterostructure grown by molecular-beam epitaxy. High-resolution time-resolved x-ray diffraction is used to study the heating and cooling of the film and substrate independently. The data are compared with a simple model for the thermal transport incorporated into dynamical diffraction calculations allowing us to extract the room-temperature cross-plane film thermal conductivity. The value is 40% lower than that extrapolated from prior results on liquid-phase epitaxy grown samples of varying concentrations.

Original languageEnglish
Article number045317
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
StatePublished - 21 Jul 2008

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