Thermal stability study of Ni/Ta n-GaN Schottky contacts

G. L. Chen, F. C. Chang, K. C. Shen, J. Ou, W. H. Chen, M. C. Lee, Wei-Kuo Chen, M. J. Jou, C. N. Huang

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Abstract

The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700°C.

Original languageEnglish
Pages (from-to)595-597
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number4
DOIs
StatePublished - 28 Jan 2002

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    Chen, G. L., Chang, F. C., Shen, K. C., Ou, J., Chen, W. H., Lee, M. C., Chen, W-K., Jou, M. J., & Huang, C. N. (2002). Thermal stability study of Ni/Ta n-GaN Schottky contacts. Applied Physics Letters, 80(4), 595-597. https://doi.org/10.1063/1.1425455