Thermal stability of trimethyl indium on Si(100)(2 × 1) as studied with HREELS, UPS and XPS: A comparison with the results from Si(111)(7 × 7) and Si(110) studies

Y. Bu*, Jason C.S. Chu, Ming-Chang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The stability of trimethyl indium on the surface of a Si(100)(2 × 1) single crystal has been investigated with UPS, XPS and HREELS. The Si dangling bond on Si(100)(2 × 1) was found to play an important role in the adsorption of TMIn, probably through the interaction with In 5pz orbitals and thus causing a distortion and/or the dissociation of the In-C bonds. However, the In-C bond breaking occurred to a much smaller extent on the (100) surface than on Si(110) and Si(111)(7 × 7). In the case of the (111) surface, TMIn attacks the adatoms before the rest-atoms. When 1 L dosed samples were annealed at 520 K, the In-C stretching vibration mode at 62 meV could still be observed in HREELS for TMIn on Si(100)(2 × 1), but not on the other two surfaces. Above 520 K, the In-C bond cracking was complete. Meanwhile CH bond breaking also began to occur on the surface, which continued as the sample was further annealed at higher temperatures. At 950 K, only C species left on the surface following the decomposition of TMIn and the desorption of the In and H species.

Original languageEnglish
Pages (from-to)243-250
Number of pages8
JournalSurface Science
Volume285
Issue number3
DOIs
StatePublished - 10 Apr 1993

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