Thermal stability of SiGe dynamic threshold pMOSFET

W. M. Liao*, C. F. Shih, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations
Original languageEnglish
Pages137-140
Number of pages4
StatePublished - 5 Dec 2005
Event12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005 - Singapore, Singapore
Duration: 27 Jun 20051 Jul 2005

Conference

Conference12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005
CountrySingapore
CitySingapore
Period27/06/051/07/05

Cite this

Liao, W. M., Shih, C. F., & Li, P-W. (2005). Thermal stability of SiGe dynamic threshold pMOSFET. 137-140. Paper presented at 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2005, Singapore, Singapore.