Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer

Hsiu Hsien Liao, Yi Ju Chen, Bing Yue Tsui*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.

Original languageEnglish
Title of host publication2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109428
DOIs
StatePublished - Apr 2019
Event2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan
Duration: 22 Apr 201925 Apr 2019

Publication series

Name2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
CountryTaiwan
CityHsinchu
Period22/04/1925/04/19

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